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DRAM ETF gained 18% last month: can it continue its outperformance

by September 7, 2026
written by September 7, 2026

The Roundhill Memory ETF has gained almost 18% over the past month as investors focus on tightening memory supply and rising demand for high-bandwidth memory (HBM) used in artificial intelligence infrastructure.

AI buildout drives memory demand

A Seeking Alpha report highlighted the growing importance of memory in the AI infrastructure buildout, citing research from Taiwan-based semiconductor market research firm TrendForce.

TrendForce reported that DRAM and NAND Flash are expected to account for 47% of cloud service providers’ total capital expenditure in 2026, with that share projected to rise to 68% in 2027.

The research linked the tightening DRAM market to increasing HBM demand.

HBM is widely used in AI workflows, while each HBM unit requires roughly three to four times the wafer capacity of traditional DDR5 memory.

As manufacturers shift production capacity toward HBM, less capacity remains available for conventional DRAM.

The memory industry has historically experienced sharp boom-and-bust cycles, contributing to periods of underinvestment and consolidation.

Samsung Electronics, SK hynix and Micron are now the three major companies remaining in the DRAM and HBM market.

DRAM prices surge as supply remains tight

The supply-demand imbalance has also been reflected in memory prices.

The Seeking Alpha report said spot prices for DDR5 16G DRAM increased from $6.20 per unit in early August 2025 to $54 as of September 3, 2026, representing a 775.6% increase.

The report also noted that higher memory prices have helped major manufacturers improve profitability. It cited Samsung’s recent rise to the top of a ranking of the world’s most profitable companies, overtaking Nvidia.

Despite the favorable industry backdrop, the Roundhill Memory ETF previously suffered a significant decline from a peak above $80. The selloff was due to forced liquidation linked to leveraged retail positioning in South Korea rather than deterioration in industry fundamentals.

The report said that valuations and shareholder-return programs at the three major memory manufacturers could provide additional support. The ETF offers a way for investors to gain exposure to Samsung, SK hynix and Micron without selecting an individual company.

Concentration creates both opportunity and risk

Samsung, SK hynix and Micron account for about 73% of the Roundhill Memory ETF’s assets.

That concentration gives investors targeted exposure to major memory companies but also increases the impact of company-specific developments.

The ETF faces several risks. A weaker quarter from one of its largest holdings or a reduction in AI infrastructure spending by a major hyperscaler could weigh disproportionately on the fund. Memory prices are also cyclical and can change quickly.

Still, the Seeking Alpha analyst argued that the current cycle could differ from earlier memory booms because HBM is increasingly important to AI workloads.

The analysis said that while AI infrastructure spending could eventually normalize, a collapse in HBM demand appears unlikely as long as major cloud providers continue expanding.

The Roundhill Memory ETF therefore offers investors concentrated exposure to a memory industry benefiting from AI-related demand, while its performance remains sensitive to semiconductor cycles, valuations and spending by major technology companies.

Passive investors looking to capitalise on the memory chip boom can invest in DRAM or other thematic funds like this through ETF platforms.

The post DRAM ETF gained 18% last month: can it continue its outperformance appeared first on Invezz

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